Display apparatus using semiconductor light emitting device, and manufacturing method therefor

ABSTRACT

The present invention relates to a display apparatus using a semiconductor light emitting device and a manufacturing method therefor and, more specifically, to a display apparatus using a semiconductor light emitting device. The display apparatus according to the present invention comprises: a wiring board which comprises a wiring electrode; a conductive adhesive layer which covers the wiring electrode; and a plurality of semiconductor light emitting devices which are coupled to the conductive adhesive layer and are electrically connected to the wiring electrode, wherein the conductive adhesive layer is applied in a patterned form on each electrode of the semiconductor light emitting devices such that a plurality of adhesive regions are provided spaced apart from each other on the wiring board.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present disclosure relates to a display apparatus and amanufacturing method thereof, and more particularly, to a displayapparatus using a semiconductor light emitting device.

2. Description of the Conventional Art

In recent years, display apparatuses having excellent characteristicssuch as low profile, flexibility and the like have been developed in thedisplay technical field. On the contrary, currently commercialized maindisplays are represented by liquid crystal displays (LCDs) and activematrix organic light emitting diodes (AMOLEDs). However, there existproblems such as not-so-fast response time, difficult implementation offlexibility in case of LCDs, and there exist drawbacks such as shortlife span, not-so-good yield as well as low flexibility in case ofAMOLEDs.

On the other hand, light emitting diodes (LEDs) are well known lightemitting devices for converting an electrical current to light, and havebeen used as a light source for displaying an image in an electronicdevice including information communication devices since red LEDs usingGaAsP compound semiconductors were made commercially available in 1962,together with a GaP:N-based green LEDs. Accordingly, the semiconductorlight emitting devices may be used to implement a flexible display,thereby presenting a scheme for solving the problems.

In a display using the semiconductor light emitting devices, electricaland physical coupling between a wiring board and a semiconductor lightemitting device is generally implemented using an anisotropic conductivefilm (ACF). However, such a method has a disadvantage in that there is arestriction in implementing the transfer of various types ofsemiconductor light emitting devices and the manufacturing cost is high,since semiconductor light emitting devices corresponding to a region ofthe anisotropic conductive film are all transferred. Accordingly, thepresent disclosure proposes a mechanism capable of implementing varioustransfers while reducing manufacturing cost.

SUMMARY OF THE INVENTION

An object of the present disclosure is to provide a manufacturing methodof a display apparatus capable of reducing manufacturing cost.

Another object of the present disclosure is to provide a method ofmanufacturing a display apparatus capable of transferring red, green,and blue semiconductor light emitting devices to a single wiring board.

Still another object of the present disclosure is to provide a mechanismcapable of transferring a large area wafer in a display apparatus.

In a display apparatus according to the present disclosure, aliquid-phase conductive adhesive layer may be coated in a pattern on awafer to implement various transfers.

For a specific example, the display apparatus may include a wiring boardhaving wiring electrodes, a conductive adhesive layer covering thewiring electrodes, and a plurality of semiconductor light emittingdevices coupled to the conductive adhesive layer and electricallyconnected to the wiring electrodes. The conductive adhesive layer mayhave a plurality of adhesive regions coated in a patterned shape on eachelectrode of the semiconductor light emitting devices, and spaced apartfrom each other on the wiring board.

According to an embodiment, the plurality of adhesive regions may haveat least one of an anisotropic conductive adhesive (ACA), a silverpaste, a tin paste, and a solder paste. A white pigment may be added tothe anisotropic conductive adhesive. An inorganic powder may be added tothe anisotropic conductive adhesive.

According to an embodiment, an insulating material may be disposedbetween the plurality of adhesive regions to fill between the pluralityof semiconductor light emitting devices. The insulating material may beformed of a material different from that of the conductive adhesivelayer.

In addition, the present disclosure discloses a manufacturing method ofa display apparatus, including growing first semiconductor lightemitting devices and second semiconductor light emitting devices on agrowth substrate, coating a conductive adhesive on the electrodes of thefirst semiconductor light emitting devices, aligning the firstsemiconductor light emitting devices on a first wiring board havingwiring electrodes, and then removing the growth substrate, coating theconductive adhesive on the electrodes of the second semiconductor lightemitting devices, and aligning the second semiconductor light emittingdevices on a second wiring board and then removing the growth substrate.

According to an embodiment, the conductive adhesive may be selectivelypattern-printed on the growth substrate by at least one of screenprinting, dispensing, and liquid-phase pattern transfer.

According to an embodiment, the manufacturing method of the displayapparatus may include pattern-printing the conductive adhesive on thegrowth substrate, and then printing or coating an insulating material onthe growth substrate.

Besides, the present disclosure discloses a manufacturing method of adisplay apparatus, including growing green semiconductor light emittingdevices and blue semiconductor light emitting devices separately on agrowth substrate such that a light emitting structure of the greensemiconductor light emitting device and the blue semiconductor lightemitting device is grown, coating a conductive adhesive on an electrodeof the green semiconductor light emitting devices or a first portioncorresponding to the green semiconductor light emitting devices on awiring electrode of a wiring board, coupling the green semiconductorlight emitting devices to the first portion, and coating the conductiveadhesive on an electrode of the blue semiconductor light emittingdevices or a second portion corresponding to the blue semiconductorlight emitting devices on the wiring electrode, and coupling the bluesemiconductor light emitting devices to the second portion.

According to an embodiment, the manufacturing method of the displayapparatus may include aligning the growth substrate of the greensemiconductor light emitting devices with another wiring board, andtransferring the green semiconductor light emitting devices to theanother wiring board.

In said transferring step, the semiconductor light emitting device thathas been coupled to the another wiring board may be aligned at a portionwhere the green semiconductor light emitting device is not present bycoupling the green semiconductor light emitting devices to the firstportion.

According to an embodiment, the manufacturing method of the displayapparatus may include providing red semiconductor light emitting deviceson a separate substrate, and coating the conductive adhesive on anelectrode of the red semiconductor light emitting devices or a thirdportion corresponding to the red semiconductor light emitting devices onthe wiring electrode, and coupling the red semiconductor light emittingdevices to the third portion.

In a display apparatus according to the present disclosure,semiconductor light emitting devices may be transferred in a desiredpattern since a liquid-phase conductive adhesive is partially printed ona wafer or a wiring board, thereby implementing a manufacturing methodwith a very wide range of application fields.

Furthermore, according to the present disclosure, a display apparatushaving semiconductor light emitting devices may be manufactured withouta photo-lithographic process, and accordingly, the manufacturing processis simple and inexpensive.

In addition, according to the present disclosure, partial transfer maybe allowed on a large area wafer, and accordingly, red, green, and bluesemiconductor light emitting devices may be transferred onto a singlewiring board.

Moreover, according to the present disclosure, it is possible to performmultiple transfers on a single wafer, thereby reducing the manufacturingcost and allowing wafer transfer of semiconductor light emitting devicesto a large area.

BRIEF DESCRIPTION OF THE DRAWING

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention. In the drawings:

FIG. 1 is a conceptual view showing a display apparatus using asemiconductor light emitting device according to an embodiment of thepresent disclosure.

FIG. 2 is a partial enlarged view of portion “A” in FIG. 1, and FIGS. 3Aand 3B are cross-sectional views taken along lines B-B and C-C in FIG.2.

FIG. 4 is a conceptual view showing a flip chip type semiconductor lightemitting device in FIG. 3.

FIGS. 5A through 5C are conceptual views showing various forms forimplementing colors in connection with a flip-chip type semiconductorlight emitting device.

FIG. 6 is cross-sectional views showing a manufacturing method of adisplay apparatus using a semiconductor light emitting device accordingto the present disclosure.

FIG. 7 is a perspective view showing a display apparatus using asemiconductor light emitting device according to another embodiment ofthe present disclosure.

FIG. 8 is a cross-sectional view taken along line D-D in FIG. 7.

FIG. 9 is a conceptual view illustrating a vertical type semiconductorlight emitting device in FIG. 8.

FIG. 10 is an enlarged view of portion “A” in FIG. 1 for explaininganother embodiment of the present disclosure to which a semiconductorlight emitting element having a new structure is applied.

FIG. 11A is a cross-sectional view taken along line E-E in FIG. 10.

FIG. 11B is a cross-sectional view taken along line F-F in FIG. 11.

FIG. 12 is a conceptual view illustrating a flip chip type semiconductorlight emitting device in FIG. 11A.

FIGS. 13A and 13B are conceptual views showing a case where ananisotropic conductive film is attached and a case where a plurality ofadhesive regions are patterned on a wafer with semiconductor lightemitting devices.

FIGS. 14A and 14B are conceptual views showing a case where ananisotropic conductive film is attached and a case where a plurality ofadhesive regions are patterned on a wiring board.

FIG. 15 is a cross-sectional view showing an embodiment of a displayapparatus when a plurality of adhesive regions are patterned.

FIGS. 16, 17 and 18 are cross-sectional views showing a manufacturingmethod of a display apparatus using semiconductor light emitting devicesaccording to the present disclosure.

FIGS. 19, 20A, 20B and 21 are conceptual views showing another exampleof a manufacturing method of a display apparatus using semiconductorlight emitting devices according to the present disclosure.

FIGS. 22 and 23 are conceptual views illustrating another manufacturingmethod of the present disclosure.

FIGS. 24 and 25 are conceptual views showing a manufacturing method ofbonding and transferring only blue and green semiconductor lightemitting devices to a wiring board.

FIG. 26 is a conceptual view showing a process of selectivelytransferring semiconductor light emitting devices using a donor plate.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereinafter, the embodiments disclosed herein will be described indetail with reference to the accompanying drawings, and the same orsimilar elements are designated with the same numeral referencesregardless of the numerals in the drawings and their redundantdescription will be omitted. A suffix “module” and “unit” used forconstituent elements disclosed in the following description is merelyintended for easy description of the specification, and the suffixitself does not give any special meaning or function. In describing anembodiment disclosed herein, moreover, the detailed description will beomitted when specific description for publicly known technologies towhich the invention pertains is judged to obscure the gist of thepresent disclosure. Also, it should be noted that the accompanyingdrawings are merely illustrated to easily explain the concept of theinvention, and therefore, they should not be construed to limit thetechnological concept disclosed herein by the accompanying drawings.

Furthermore, it will be understood that when an element such as a layer,region or substrate is referred to as being “on” another element, it canbe directly on the another element or an intermediate element may alsobe interposed therebetween.

A display apparatus disclosed herein may include a portable phone, asmart phone, a laptop computer, a digital broadcast terminal, a personaldigital assistant (PDA), a portable multimedia player (PMP), anavigation, a slate PC, a tablet PC, an ultrabook, a digital TV, adesktop computer, and the like. However, it would be easily understoodby those skilled in the art that a configuration disclosed herein may beapplicable to any displayable device even though it is a new producttype which will be developed later.

FIG. 1 is a conceptual view showing a display apparatus using asemiconductor light emitting device according to an embodiment of thepresent disclosure.

According to the drawing, information processed in the controller of thedisplay apparatus 100 may be displayed using a flexible display.

The flexible display may include a flexible, bendable, twistable,foldable and rollable display. For example, the flexible display may bea display manufactured on a thin and flexible substrate that can bewarped, bent, folded or rolled like a paper sheet while maintaining thedisplay characteristics of a flat display in the related art.

A display area of the flexible display becomes a plane in aconfiguration that the flexible display is not warped (for example, aconfiguration having an infinite radius of curvature, hereinafter,referred to as a “first configuration”). The display area thereofbecomes a curved surface in a configuration that the flexible display iswarped by an external force in the first configuration (for example, aconfiguration having a finite radius of curvature, hereinafter, referredto as a “second configuration”). As illustrated in the drawing,information displayed in the second configuration may be visualinformation displayed on a curved surface. The visual information may berealized in such a manner that a light emission of each unit pixel(sub-pixel) arranged in a matrix configuration is controlledindependently. The unit pixel denotes an elementary unit forrepresenting one color.

The sub-pixel of the flexible display may be implemented by asemiconductor light emitting device. According to the presentdisclosure, a light emitting diode (LED) is illustrated as a type ofsemiconductor light emitting device. The light emitting diode may beformed with a small size to perform the role of a sub-pixel even in thesecond configuration through this.

Hereinafter, a flexible display implemented using the light emittingdiode will be described in more detail with reference to theaccompanying drawings.

FIG. 2 is a partial enlarged view of portion “A” in FIG. 1, and FIGS. 3Aand 3B are cross-sectional views taken along lines B-B and C-C in FIG.2, FIG. 4 is a conceptual view illustrating a flip-chip typesemiconductor light emitting device in FIG. 3A, and FIGS. 5A through 5Care conceptual views illustrating various forms for implementing colorsin connection with a flip-chip type semiconductor light emitting device.

According to the drawings in FIGS. 2, 3A and 3B, there is illustrated adisplay apparatus 100 using a passive matrix (PM) type semiconductorlight emitting device as a display apparatus 100 using a semiconductorlight emitting device. However, an example described below may also beapplicable to an active matrix (AM) type semiconductor light emittingdevice.

The display apparatus 100 may include a substrate 110, a first electrode120, a conductive adhesive layer 130, a second electrode 140, and aplurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. The substrate 110 maycontain glass or polyimide (PI) to implement the flexible displayapparatus. In addition, if it is a flexible material, any one such aspolyethylene naphthalate (PEN), polyethylene terephthalate (PET) or thelike may be used. Furthermore, the substrate 110 may be either one oftransparent and non-transparent materials.

The substrate 110 may be a wiring board disposed with the firstelectrode 120, and thus the first electrode 120 may be placed on thesubstrate 110.

According to the drawing, an insulating layer 160 may be disposed on thesubstrate 110 placed with the first electrode 120, and an auxiliaryelectrode 170 may be placed on the insulating layer 160. In this case, aconfiguration in which the insulating layer 160 is deposited on thesubstrate 110 may be a single wiring board. More specifically, theinsulating layer 160 may be incorporated into the substrate 110 with aninsulating and flexible material such as polyimide (PI), PET, PEN or thelike to form single wiring board.

The auxiliary electrode 170 as an electrode for electrically connectingthe first electrode 120 to the semiconductor light emitting device 150is placed on the insulating layer 160, and disposed to correspond to thelocation of the first electrode 120. For example, the auxiliaryelectrode 170 has a dot shape, and may be electrically connected to thefirst electrode 120 by means of an electrode hole 171 passing throughthe insulating layer 160. The electrode hole 171 may be formed byfilling a conductive material in a via hole.

Referring to the drawings, the conductive adhesive layer 130 may beformed on one surface of the insulating layer 160, but the presentdisclosure may not be necessarily limited to this. For example, it maybe possible to also have a structure in which the conductive adhesivelayer 130 is disposed on the substrate 110 with no insulating layer 160.The conductive adhesive layer 130 may perform the role of an insulatinglayer in the structure in which the conductive adhesive layer 130 isdisposed on the substrate 110.

The conductive adhesive layer 130 may be a layer having adhesiveness andconductivity, and to this end, a conductive material and an adhesivematerial may be mixed on the conductive adhesive layer 130. Furthermore,the conductive adhesive layer 130 may have flexibility, thereby allowinga flexible function in the display apparatus.

For such an example, the conductive adhesive layer 130 may be ananisotropic conductive film (ACF), an anisotropic conductive paste, asolution containing conductive particles, and the like. The conductiveadhesive layer 130 may allow electrical interconnection in thez-direction passing through the thickness thereof, but may be configuredas a layer having electrical insulation in the horizontal x-y directionthereof. Accordingly, the conductive adhesive layer 130 may be referredto as a z-axis conductive layer (however, hereinafter referred to as a“conductive adhesive layer”).

The anisotropic conductive film is a film with a form in which ananisotropic conductive medium is mixed with an insulating base member,and thus when heat and pressure are applied thereto, only a specificportion thereof may have conductivity by means of the anisotropicconductive medium. Hereinafter, heat and pressure are applied to theanisotropic conductive film, but other methods may be also available forthe anisotropic conductive film to partially have conductivity. Themethods may include applying only either one of heat and pressurethereto, UV curing, and the like.

Furthermore, the anisotropic conductive medium may be conductive ballsor particles. According to the drawing, in this example, the anisotropicconductive film is a film with a form in which an anisotropic conductivemedium is mixed with an insulating base member, and thus when heat andpressure are applied thereto, only a specific portion thereof may haveconductivity by means of the conductive balls. The anisotropicconductive film may be in a state in which a core with a conductivematerial contains a plurality of particles coated by an insulating layerwith a polymer material, and in this case, it may have conductivity bymeans of the core while breaking an insulating layer on a portion towhich heat and pressure are applied. Here, a core may be transformed toimplement a layer having both surfaces to which objects contact in thethickness direction of the film. For a more specific example, heat andpressure are applied to an anisotropic conductive film as a whole, andelectrical connection in the z-axis direction is partially formed by aheight difference from a mating object adhered by the use of theanisotropic conductive film.

For another example, an anisotropic conductive film may be in a statecontaining a plurality of particles in which a conductive material iscoated on insulating cores. In this case, a portion to which heat andpressure are applied may be converted (pressed and adhered) to aconductive material to have conductivity in the thickness direction ofthe film. For still another example, it may be formed to haveconductivity in the thickness direction of the film in which aconductive material passes through an insulating base member in thez-direction. In this case, the conductive material may have a pointedend portion.

According to the drawing, the anisotropic conductive film may be a fixedarray anisotropic conductive film (ACF) configured with a form in whichconductive balls are inserted into one surface of the insulating basemember. More specifically, the insulating base member is formed of anadhesive material, and the conductive balls are intensively disposed ata bottom portion of the insulating base member, and when heat andpressure are applied thereto, the base member is modified along with theconductive balls, thereby having conductivity in the vertical directionthereof.

However, the present disclosure may not be necessarily limited to this,and the anisotropic conductive film may be all allowed to have a form inwhich conductive balls are randomly mixed with an insulating base memberor a form configured with a plurality of layers in which conductiveballs are disposed at any one layer (double-ACF), and the like.

The anisotropic conductive paste as a form coupled to a paste andconductive balls may be a paste in which conductive balls are mixed withan insulating and adhesive base material. Furthermore, a solutioncontaining conductive particles may be a solution in a form containingconductive particles or nano particles.

Referring again to the drawing, the second electrode 140 is located atthe insulating layer 160 to be separated from the auxiliary electrode170. In other words, the conductive adhesive layer 130 is disposed onthe insulating layer 160 located with the auxiliary electrode 170 andsecond electrode 140.

When the conductive adhesive layer 130 is formed in a state that theauxiliary electrode 170 and second electrode 140 are located, and thenthe semiconductor light emitting device 150 is connect thereto in a flipchip form with the application of heat and pressure, the semiconductorlight emitting device 150 is electrically connected to the firstelectrode 120 and second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be aflip chip type semiconductor light emitting device.

For example, the semiconductor light emitting device may include ap-type electrode 156, a p-type semiconductor layer 155 formed with thep-type electrode 156, an active layer 154 formed on the p-typesemiconductor layer 155, an n-type semiconductor layer 153 formed on theactive layer 154, and an n-type electrode 152 disposed to be separatedfrom the p-type electrode 156 in the horizontal direction on the n-typesemiconductor layer 153. In this case, the p-type electrode 156 may beelectrically connected to the welding portion 179 by the conductiveadhesive layer 130, and the n-type electrode 152 may be electricallyconnected to the second electrode 140.

Referring to FIGS. 2, 3A and 3B again, the auxiliary electrode 170 maybe formed in an elongated manner in one direction to be electricallyconnected to a plurality of semiconductor light emitting devices 150.For example, the left and right p-type electrodes of the semiconductorlight emitting devices around the auxiliary electrode may beelectrically connected to one auxiliary electrode.

More specifically, the semiconductor light emitting device 150 ispressed into the conductive adhesive layer 130, and through this, only aportion between the p-type electrode 156 and auxiliary electrode 170 ofthe semiconductor light emitting device 150 and a portion between then-type electrode 152 and second electrode 140 of the semiconductor lightemitting device 150 have conductivity, and the remaining portion doesnot have conductivity since there is no push-down of the semiconductorlight emitting device. As described above, the conductive adhesive layer130 may form an electrical connection as well as allow a mutual couplingbetween the semiconductor light emitting device 150 and the auxiliaryelectrode 170 and between the semiconductor light emitting device 150and the second electrode 140.

Furthermore, a plurality of semiconductor light emitting devices 150constitute a light-emitting array, and a phosphor layer 180 is formed onthe light-emitting array.

The light emitting device array may include a plurality of semiconductorlight emitting devices with different self-luminance values. Each of thesemiconductor light emitting devices 150 constitutes a sub-pixel, and iselectrically connected to the first electrode 120. For example, theremay exist a plurality of first electrodes 120, and the semiconductorlight emitting devices are arranged in several rows, for instance, andeach row of the semiconductor light emitting devices may be electricallyconnected to any one of the plurality of first electrodes.

Furthermore, the semiconductor light emitting devices may be connectedin a flip chip form, and thus semiconductor light emitting devices grownon a transparent dielectric substrate. Furthermore, the semiconductorlight emitting devices may be nitride semiconductor light emittingdevices, for instance. The semiconductor light emitting device 150 hasan excellent luminance characteristic, and thus it may be possible toconfigure individual sub-pixels even with a small size thereof.

According to the drawing, a partition wall 190 may be formed between thesemiconductor light emitting devices 150. In this case, the partitionwall 190 may perform the role of dividing individual sub-pixels from oneanother, and be formed as an integral body with the conductive adhesivelayer 130. For example, a base member of the anisotropic conductive filmmay form the partition wall when the semiconductor light emitting device150 is inserted into the anisotropic conductive film.

Furthermore, when the base member of the anisotropic conductive film isblack, the partition wall 190 may have reflective characteristics whileat the same time increasing contrast with no additional black insulator.

For another example, a reflective partition wall may be separatelyprovided with the partition wall 190. In this case, the partition wall190 may include a black or white insulator according to the purpose ofthe display apparatus. It may have an effect of enhancing reflectivitywhen the partition wall of the while insulator is used, and increasecontrast while at the same time having reflective characteristics.

The phosphor layer 180 may be located at an outer surface of thesemiconductor light emitting device 150. For example, the semiconductorlight emitting device 150 is a blue semiconductor light emitting devicethat emits blue (B) light, and the phosphor layer 180 performs the roleof converting the blue (B) light into the color of a sub-pixel. Thephosphor layer 180 may be a red phosphor layer 181 or green phosphorlayer 182 constituting individual pixels.

In other words, a red phosphor 181 capable of converting blue light intored (R) light may be deposited on the blue semiconductor light emittingdevice 151 at a location implementing a red sub-pixel, and a greenphosphor 182 capable of converting blue light into green (G) light maybe deposited on the blue semiconductor light emitting device 151 at alocation implementing a green sub-pixel. Furthermore, only the bluesemiconductor light emitting device 151 may be solely used at a locationimplementing a blue sub-pixel. In this case, the red (R), green (G) andblue (B) sub-pixels may implement one pixel. More specifically, onecolor phosphor may be deposited along each line of the first electrode120. Accordingly, one line on the first electrode 120 may be anelectrode controlling one color. In other words, red (R), green (B) andblue (B) may be sequentially disposed along the second electrode 140,thereby implementing sub-pixels.

However, the present disclosure may not be necessarily limited to this,and the semiconductor light emitting device 150 may be combined with aquantum dot (QD) instead of a phosphor to implement sub-pixels such asred (R), green (G) and blue (B).

Furthermore, a black matrix 191 may be disposed between each phosphorlayer to enhance contrast. In other words, the black matrix 191 canenhance the contrast of luminance.

However, the present disclosure may not be necessarily limited to this,and another structure for implementing blue, red and green may be alsoapplicable thereto.

Referring to FIG. 5A, each of the semiconductor light emitting devices150 may be implemented with a high-power light emitting device thatemits various lights including blue in which gallium nitride (GaN) ismostly used, and indium (In) and or aluminum (Al) are added thereto.

In this case, the semiconductor light emitting device 150 may be red,green and blue semiconductor light emitting devices, respectively, toimplement each sub-pixel. For instance, red, green and bluesemiconductor light emitting devices (R, G, B) are alternately disposed,and red, green and blue sub-pixels implement one pixel by means of thered, green and blue semiconductor light emitting devices, therebyimplementing a full color display.

Referring to FIG. 5B, the semiconductor light emitting device may have awhite light emitting device (W) provided with a yellow phosphor layerfor each element. In this case, a red phosphor layer 181, a greenphosphor layer 182 and blue phosphor layer 183 may be provided on thewhite light emitting device (W) to implement a sub-pixel. Furthermore, acolor filter repeated with red, green and blue on the white lightemitting device (W) may be used to implement a sub-pixel.

Referring to FIG. 5C, it may be possible to also have a structure inwhich a red phosphor layer 181, a green phosphor layer 182 and bluephosphor layer 183 may be provided on a ultra violet light emittingdevice (UV). In this manner, the semiconductor light emitting device canbe used over the entire region up to ultra violet (UV) as well asvisible light, and may be extended to a form of semiconductor lightemitting device in which ultra violet (UV) can be used as an excitationsource.

Taking the present example into consideration again, the semiconductorlight emitting device 150 is placed on the conductive adhesive layer 130to configure a sub-pixel in the display apparatus. The semiconductorlight emitting device 150 may have excellent luminance characteristics,and thus it may be possible to configure individual sub-pixels even witha small size thereof. The size of the individual semiconductor lightemitting device 150 may be less than 80 μm in the length of one sidethereof, and formed with a rectangular or square shaped element. In caseof a rectangular shaped element, the size thereof may be less than 20×80μm.

Furthermore, even when a square shaped semiconductor light emittingdevice 150 with a length of side of 10 μm is used for a sub-pixel, itwill exhibit a sufficient brightness for implementing a displayapparatus. Accordingly, for example, in case of a rectangular pixel inwhich one side of a sub-pixel is 600 μm in size, and the remaining oneside thereof is 300 μm, a relative distance between the semiconductorlight emitting devices becomes sufficiently large. Accordingly, in thiscase, it may be possible to implement a flexible display apparatushaving a HD image quality.

A display apparatus using the foregoing semiconductor light emittingdevice will be manufactured by a new type of manufacturing method.Hereinafter, the manufacturing method will be described with referenceto FIG. 6.

FIG. 6 is cross-sectional views illustrating a manufacturing method of adisplay apparatus using a semiconductor light emitting device accordingto the present disclosure.

Referring to the drawing, first, the conductive adhesive layer 130 isformed on the insulating layer 160 located with the auxiliary electrode170 and second electrode 140. The insulating layer 160 is deposited onthe first substrate 110 to form one substrate (or wiring board), and thefirst electrode 120, auxiliary electrode 170 and second electrode 140are disposed at the wiring board. In this case, the first electrode 120and second electrode 140 may be disposed in a perpendicular direction toeach other. Furthermore, the first substrate 110 and insulating layer160 may contain glass or polyimide (PI), respectively, to implement aflexible display apparatus.

The conductive adhesive layer 130 may be implemented by an anisotropicconductive film, for example, and to this end, an anisotropic conductivefilm may be coated on a substrate located with the insulating layer 160.

Next, a second substrate 112 located with a plurality of semiconductorlight emitting devices 150 corresponding to the location of theauxiliary electrodes 170 and second electrodes 140 and constitutingindividual pixels is disposed such that the semiconductor light emittingdevice 150 faces the auxiliary electrode 170 and second electrode 140.

In this case, the second substrate 112 as a growth substrate for growingthe semiconductor light emitting device 150 may be a sapphire substrateor silicon substrate.

The semiconductor light emitting device may have a gap and size capableof implementing a display apparatus when formed in the unit of wafer,and thus effectively used for a display apparatus.

Next, the wiring board is thermally compressed to the second substrate112. For example, the wiring board and second substrate 112 may bethermally compressed to each other by applying an ACF press head. Thewiring board and second substrate 112 are bonded to each other using thethermal compression. Only a portion between the semiconductor lightemitting device 150 and the auxiliary electrode 170 and second electrode140 may have conductivity due to the characteristics of an anisotropicconductive film having conductivity by thermal compression, therebyallowing the electrodes and semiconductor light emitting device 150 tobe electrically connected to each other. At this time, the semiconductorlight emitting device 150 may be inserted into the anisotropicconductive film, thereby forming a partition wall between thesemiconductor light emitting devices 150.

Next, the second substrate 112 is removed. For example, the secondsubstrate 112 may be removed using a laser lift-off (LLO) or chemicallift-off (CLO) method.

Finally, the second substrate 112 is removed to expose the semiconductorlight emitting devices 150 to the outside. Silicon oxide (SiOx) or thelike may be coated on the wiring board coupled to the semiconductorlight emitting device 150 to form a transparent insulating layer (notshown).

Furthermore, it may further include the process of forming a phosphorlayer on one surface of the semiconductor light emitting device 150. Forexample, the semiconductor light emitting device 150 may be a bluesemiconductor light emitting device for emitting blue (B) light, and redor green phosphor for converting the blue (B) light into the color ofthe sub-pixel may form a layer on one surface of the blue semiconductorlight emitting device.

The manufacturing method or structure of a display apparatus using theforegoing semiconductor light emitting device may be modified in variousforms. For such an example, the foregoing display apparatus may beapplicable to a vertical semiconductor light emitting device.Hereinafter, the vertical structure will be described with reference toFIGS. 5 and 6.

Furthermore, according to the following modified example or embodiment,the same or similar reference numerals are designated to the same orsimilar configurations to the foregoing example, and the descriptionthereof will be substituted by the earlier description.

FIG. 7 is a perspective view illustrating a display apparatus using asemiconductor light emitting device according to another embodiment ofthe present disclosure. FIG. 8 is a cross-sectional view taken alongline C-C in FIG. 7, and FIG. 9 is a conceptual view illustrating avertical type semiconductor light emitting device in FIG. 8.

According to the drawings, the display apparatus may be displayapparatus using a passive matrix (PM) type of vertical semiconductorlight emitting device.

The display apparatus may include a substrate 210, a first electrode220, a conductive adhesive layer 230, a second electrode 240 and aplurality of semiconductor light emitting devices 250.

The substrate 210 as a wiring board disposed with the first electrode220 may include polyimide (PI) to implement a flexible displayapparatus. In addition, any one may be used if it is an insulating andflexible material.

The first electrode 220 may be located on the substrate 210, and formedwith a bar-shaped electrode elongated in one direction. The firstelectrode 220 may be formed to perform the role of a data electrode.

The conductive adhesive layer 230 is formed on the substrate 210 locatedwith the first electrode 220. Similar to a display apparatus to which aflip chip type light emitting device is applied, the conductive adhesivelayer 230 may be an anisotropic conductive film (ACF), an anisotropicconductive paste, a solution containing conductive particles, and thelike. However, the present embodiment illustrates a case where theconductive adhesive layer 230 is implemented by an anisotropicconductive film.

When an anisotropic conductive film is located in a state that the firstelectrode 220 is located on the substrate 210, and then heat andpressure are applied to connect the semiconductor light emitting device250 thereto, the semiconductor light emitting device 250 is electricallyconnected to the first electrode 220. At this time, the semiconductorlight emitting device 250 may be preferably disposed on the firstelectrode 220.

The electrical connection is generated because an anisotropic conductivefilm partially has conductivity in the thickness direction when heat andpressure are applied as described above. Accordingly, the anisotropicconductive film is partitioned into a portion 231 having conductivityand a portion 232 having no conductivity in the thickness directionthereof.

Furthermore, the anisotropic conductive film contains an adhesivecomponent, and thus the conductive adhesive layer 230 implements amechanical coupling as well as an electrical coupling between thesemiconductor light emitting device 250 and the first electrode 220.

In this manner, the semiconductor light emitting device 250 is placed onthe conductive adhesive layer 230, thereby configuring a separatesub-pixel in the display apparatus. The semiconductor light emittingdevice 250 may have excellent luminance characteristics, and thus it maybe possible to configure individual sub-pixels even with a small sizethereof. The size of the individual semiconductor light emitting device250 may be less than 80 μm in the length of one side thereof, and formedwith a rectangular or square shaped element. In case of a rectangularshaped element, the size thereof may be less than 20×80 μm.

The semiconductor light emitting device 250 may be a vertical structure.

A plurality of second electrodes 240 disposed in a direction of crossingthe length direction of the first electrode 220, and electricallyconnected to the vertical semiconductor light emitting device 250 may belocated between vertical semiconductor light emitting devices.

Referring to FIG. 9, the vertical semiconductor light emitting devicemay include a p-type electrode 256, a p-type semiconductor layer 255formed with the p-type electrode 256, an active layer 254 formed on thep-type semiconductor layer 255, an n-type semiconductor layer 253 formedon the active layer 254, and an n-type electrode 252 formed on then-type semiconductor layer 253. In this case, the p-type electrode 256located at the bottom thereof may be electrically connected to the firstelectrode 220 by the conductive adhesive layer 230, and the n-typeelectrode 252 located at the top thereof may be electrically connectedto the second electrode 240 which will be described later. Theelectrodes may be disposed in the upward/downward direction in thevertical semiconductor light emitting device 250, thereby providing agreat advantage capable of reducing the chip size.

Referring again to FIG. 8, a phosphor layer 280 may be formed on onesurface of the semiconductor light emitting device 250. For example, thesemiconductor light emitting device 250 is a blue semiconductor lightemitting device 251 that emits blue (B) light, and the phosphor layer280 for converting the blue (B) light into the color of the sub-pixelmay be provided thereon. In this case, the phosphor layer 280 may be ared phosphor 281 and a green phosphor 282 constituting individualpixels.

In other words, a red phosphor 281 capable of converting blue light intored (R) light may be deposited on the blue semiconductor light emittingdevice 251 at a location implementing a red sub-pixel, and a greenphosphor 282 capable of converting blue light into green (G) light maybe deposited on the blue semiconductor light emitting device 251 at alocation implementing a green sub-pixel. Furthermore, only the bluesemiconductor light emitting device 251 may be solely used at a locationimplementing a blue sub-pixel. In this case, the red (R), green (G) andblue (B) sub-pixels may implement one pixel.

However, the present disclosure may not be necessarily limited to this,and another structure for implementing blue, red and green may be alsoapplicable thereto as described above in a display apparatus to which aflip chip type light emitting device is applied.

Taking the present embodiment into consideration again, the secondelectrode 240 is located between the semiconductor light emittingdevices 250, and electrically connected to the semiconductor lightemitting devices 250. For example, the semiconductor light emittingdevices 250 may be disposed in a plurality of rows, and the secondelectrode 240 may be located between the rows of the semiconductor lightemitting devices 250.

Since a distance between the semiconductor light emitting devices 250constituting individual pixels is sufficiently large, the secondelectrode 240 may be located between the semiconductor light emittingdevices 250.

The second electrode 240 may be formed with a bar-shaped electrodeelongated in one direction, and disposed in a perpendicular direction tothe first electrode.

Furthermore, the second electrode 240 may be electrically connected tothe semiconductor light emitting device 250 by a connecting electrodeprotruded from the second electrode 240. More specifically, theconnecting electrode may be an n-type electrode of the semiconductorlight emitting device 250. For example, the n-type electrode is formedwith an ohmic electrode for ohmic contact, and the second electrodecovers at least part of the ohmic electrode by printing or deposition.Through this, the second electrode 240 may be electrically connected tothe n-type electrode of the semiconductor light emitting device 250.

According to the drawing, the second electrode 240 may be located on theconductive adhesive layer 230. According to circumstances, a transparentinsulating layer (not shown) containing silicon oxide (SiOx) may beformed on the substrate 210 formed with the semiconductor light emittingdevice 250. When the transparent insulating layer is formed and then thesecond electrode 240 is placed thereon, the second electrode 240 may belocated on the transparent insulating layer. Furthermore, the secondelectrode 240 may be formed to be separated from the conductive adhesivelayer 230 or transparent insulating layer.

If a transparent electrode such as indium tin oxide (ITO) is used tolocate the second electrode 240 on the semiconductor light emittingdevice 250, the ITO material has a problem of bad adhesiveness with ann-type semiconductor. Accordingly, the second electrode 240 may beplaced between the semiconductor light emitting devices 250, therebyobtaining an advantage in which the transparent electrode is notrequired. Accordingly, an n-type semiconductor layer and a conductivematerial having a good adhesiveness may be used as a horizontalelectrode without being restricted by the selection of a transparentmaterial, thereby enhancing the light extraction efficiency.

According to the drawing, a partition wall 290 may be formed between thesemiconductor light emitting devices 250. In other words, the partitionwall 290 may be disposed between the vertical semiconductor lightemitting devices 250 to isolate the semiconductor light emitting device250 constituting individual pixels. In this case, the partition wall 290may perform the role of dividing individual sub-pixels from one another,and be formed as an integral body with the conductive adhesive layer230. For example, a base member of the anisotropic conductive film mayform the partition wall when the semiconductor light emitting device 250is inserted into the anisotropic conductive film.

Furthermore, when the base member of the anisotropic conductive film isblack, the partition wall 290 may have reflective characteristics whileat the same time increasing contrast with no additional black insulator.

For another example, a reflective partition wall may be separatelyprovided with the partition wall 290. In this case, the partition wall290 may include a black or white insulator according to the purpose ofthe display apparatus.

If the second electrode 240 is precisely located on the conductiveadhesive layer 230 between the semiconductor light emitting devices 250,the partition wall 290 may be located between the semiconductor lightemitting device 250 and second electrode 240. Accordingly, individualsub-pixels may be configured even with a small size using thesemiconductor light emitting device 250, and a distance between thesemiconductor light emitting devices 250 may be relatively sufficientlylarge to place the second electrode 240 between the semiconductor lightemitting devices 250, thereby having the effect of implementing aflexible display apparatus having a HD image quality.

Furthermore, according to the drawing, a black matrix 291 may bedisposed between each phosphor layer to enhance contrast. In otherwords, the black matrix 291 can enhance the contrast of luminance.

As described above, the semiconductor light emitting device 250 islocated on the conductive adhesive layer 230, thereby constitutingindividual pixels on the display apparatus. The semiconductor lightemitting device 250 may have excellent luminance characteristics, andthus it may be possible to configure individual sub-pixels even with asmall size thereof. As a result, it may be possible to implement a fullcolor display in which the sub-pixels of red (R), green (G) and blue (B)implement one pixel by means of the semiconductor light emitting device.

In a display apparatus using the foregoing semiconductor light emittingdevice of the present disclosure, when a flip chip type is appliedthereto, the first and second electrodes are disposed on the same plane,thereby causing a problem in which it is difficult to realize a finepitch. Hereinafter, a display apparatus to which a flip chip type lightemitting device according to another embodiment of the presentdisclosure capable of solving such a problem is applied will bedescribed.

FIG. 10 is an enlarged view of portion “A” in FIG. 1 for explaininganother embodiment of the present disclosure to which a semiconductorlight emitting device having a new structure is applied, FIG. 11A is across-sectional view taken along line E-E in FIG. 10, FIG. 11B is across-sectional view taken along line F-F in FIG. 11, and FIG. 12 is aconceptual view illustrating a flip chip type semiconductor lightemitting device in FIG. 11A.

According to the drawings in FIGS. 10, 11A and 11B, there is illustrateda display apparatus 1000 using a passive matrix (PM) type semiconductorlight emitting device as a display apparatus 1000 using a semiconductorlight emitting device. However, an example described below may also beapplicable to an active matrix (AM) type semiconductor light emittingdevice.

The display apparatus 1000 may include a substrate 1010, a firstelectrode 1020, a conductive adhesive layer, a second electrode 1040,and a plurality of semiconductor light emitting devices 1050. Here, thefirst electrode 1020 and the second electrode 1040 may respectivelyinclude a plurality of electrode lines.

The substrate 1010 as a wiring board disposed with the first electrode1020 may include polyimide (PI) to implement a flexible displayapparatus. In addition, any one may be used if it is an insulating andflexible material.

The first electrode 1020 may be located on the substrate 1010, andformed with a bar-shaped electrode elongated in one direction. The firstelectrode 1020 may be formed to perform the role of a data electrode.

The conductive adhesive layer is formed on the substrate 1010 locatedwith the first electrode 1020. Similar to a display apparatus to whichthe foregoing flip chip type light emitting device is applied, theconductive adhesive layer may be an anisotropic conductive film (ACF)1030.

A plurality of second electrodes 1040 disposed in a direction ofcrossing the length direction of the first electrode 1020, andelectrically connected to the semiconductor light emitting device 1050may be located between the semiconductor light emitting devices.

According to the drawing, the second electrode 1040 may be located onthe anisotropic adhesive layer 1030. In other words, the anisotropicconductive film 1030 is disposed between the wiring board and the secondelectrode 1040. The second electrode 1040 may be electrically connectedby contact with the semiconductor light emitting device 1050.

A plurality of semiconductor light emitting devices 1050 are coupled tothe anisotropic conductive film 1030, and electrically connected to thefirst electrode 1020 and the second electrode 1040 by the foregoingstructure.

According to circumstances, a transparent insulating layer (not shown)containing silicon oxide (SiOx) may be formed on the substrate 1010formed with the semiconductor light emitting device 1050. When thetransparent insulating layer is formed and then the second electrode1040 is placed thereon, the second electrode 1040 may be located on thetransparent insulating layer. Furthermore, the second electrode 1040 maybe formed to be separated from the anisotropic conductive film 1030 ortransparent insulating layer.

As shown in the drawing, the plurality of semiconductor light emittingdevices 1050 may form a plurality of columns in a direction parallel toa plurality of electrode lines provided in the first electrode 1020.However, the present disclosure is not necessarily limited thereto. Forexample, the plurality of semiconductor light emitting devices 1050 mayform a plurality of columns along the second electrode 1040.

Moreover, the display apparatus 1000 may further include a phosphorlayer 1080 formed on one surface of the plurality of semiconductor lightemitting devices 1050. For example, the semiconductor light emittingdevice 1050 is a blue semiconductor light emitting device that emitsblue (B) light, and the phosphor layer 1080 performs the role ofconverting the blue (B) light into the color of a sub-pixel. Thephosphor layer 1080 may be a red phosphor layer 1081 or green phosphorlayer 1082 constituting individual pixels. In other words, a redphosphor 1081 capable of converting blue light into red (R) light may bedeposited on the blue semiconductor light emitting device 1051 a at alocation implementing a red sub-pixel, and a green phosphor 1082 capableof converting blue light into green (G) light may be deposited on theblue semiconductor light emitting device 1051 b at a locationimplementing a green sub-pixel. Furthermore, only the blue semiconductorlight emitting device 1051 c may be solely used at a locationimplementing a blue sub-pixel. In this case, the red (R), green (G) andblue (B) sub-pixels may implement one pixel. More specifically, onecolor phosphor may be deposited along each line of the first electrode1020. Accordingly, one line on the first electrode 1020 may be anelectrode controlling one color. In other words, red (R), green (B) andblue (B) may be sequentially disposed along the second electrode 1040,thereby implementing sub-pixels. However, the present disclosure may notbe necessarily limited to this, and the semiconductor light emittingdevice 1050 may be combined with a quantum dot (QD) instead of aphosphor to implement sub-pixels that emit red (R), green (G) and blue(B).

On the other hand, in order to improve the contrast of the phosphorlayer 1080, the display apparatus may further include a black matrix1091 disposed between each phosphor. The black matrix 1091 may be formedin such a manner that a gap is formed between the phosphor dots and ablack material fills the gap. Through this, the black matrix 1091 mayimprove contrast between light and dark while absorbing external lightreflection. The black matrix 1091 is located between respective phosphorlayers along the first electrode 1020 in a direction in which thephosphor layers 1080 are layered. In this case, a phosphor layer may notbe formed at a position corresponding to the blue semiconductor lightemitting device 1051, but the black matrix 1091 may be respectivelyformed at both sides thereof with a space that does not have the bluelight emitting device 1051 c therebetween.

Meanwhile, referring to the semiconductor light emitting device 1050according to the present example, the electrodes may be disposed in anupward/downward direction in the semiconductor light emitting device1050 in the present embodiment, thereby having a great advantage capableof reducing the chip size. However, the electrode may be disposed on thetop and the bottom, but the semiconductor light emitting device may be aflip chip type semiconductor light emitting device.

Referring to FIG. 12, the semiconductor light emitting device 1050includes a first conductive electrode 1156, a first conductivesemiconductor layer 1155 formed with the first conductive electrode1156, an active layer 1154 formed on the first conductive semiconductorlayer 1155, a second conductive semiconductor layer 1153 formed on theactive layer 1154, and a second conductive electrode 1152 formed on thesecond conductive semiconductor layer 1153.

More specifically, the first conductive electrode 1156 and the firstconductive semiconductor layer 1155 may be a p-type electrode and ap-type semiconductor layer, respectively, and the second conductiveelectrode 1152 and the second conductive semiconductor layer 1153 may bean n-type electrode and an n-type semiconductor layer, respectively.However, the present disclosure is not limited thereto, and the firstconductive type may be n-type and the second conductive type may bep-type.

More specifically, the first conductive electrode 1156 is formed on onesurface of the first conductive semiconductor layer 1155, and the activelayer 1154 is formed on the other surface of the first conductivesemiconductor layer 1155 and one surface of the second conductivesemiconductor layer 1153, and the second conductive electrode 1152 isformed on one surface of the second conductive semiconductor layer 1153.

In this case, the second conductive electrode is disposed on one surfaceof the second conductive semiconductor layer 1153, and an undopedsemiconductor layer 1153 a is formed on the other surface of the secondconductive semiconductor layer 1153.

Referring to FIG. 12 together with FIGS. 10 through 11B, one surface ofthe second conductive semiconductor layer may be a surface closest tothe wiring board, and the other surface of the second conductivesemiconductor layer may be a surface farthest from the wiring board.

Furthermore, the first conductive electrode 1156 and the secondconductive electrode 1152 may have a height difference from each otherin width and vertical directions (or thickness direction) at positionsspaced apart along the width direction of the semiconductor lightemitting device.

The second conductive electrode 1152 is formed on the second conductivesemiconductor layer 1153 using the height difference, but disposedadjacent to the second electrode 1040 located at an upper side of thesemiconductor light emitting device. For example, at least part of thesecond conductive electrode 1152 may protrude from a side surface of thesecond conductive semiconductor layer 1153 (or a side surface of theundoped semiconductor layer 1153 a). As described above, since thesecond conductive electrode 1152 protrudes from the side surface, thesecond conductive electrode 1152 may be exposed to an upper side of thesemiconductor light emitting device. Through this, the second conductiveelectrode 1152 is disposed at a position overlapping the secondelectrode 1040 disposed at an upper side of the anisotropic conductivefilm 1030.

More specifically, the semiconductor light emitting device includes aprotruding portion 1152 a extending from the second conductive electrode1152, and protruding from a side surface of the plurality ofsemiconductor light emitting devices. In this case, referring to theprotruding portion 1152 a as a reference, the first conductive electrode1156 and the second conductive electrode 1152 are disposed at positionsspaced apart along the protruding direction of the protruding portion1152 a, and may be expressed such that they are formed to have a heightis difference from each other in a direction perpendicular to theprotruding direction.

The protruding portion 1152 a extends laterally from one surface of thesecond conductive semiconductor layer 1153, and extends to an uppersurface of the second conductive semiconductor layer 1153, and morespecifically, to the undoped semiconductor layer 1153 a. The protrudingportion 1152 a protrudes along the width direction from a side surfaceof the undoped semiconductor layer 1153 a. Accordingly, the protrudingportion 1152 a may be electrically connected to the second electrode1040 on the opposite side of the first conductive electrode with respectto the second conductive semiconductor layer.

A structure including the protruding portion 1152 a may be a structurecapable of using the above-described horizontal semiconductor lightemitting device and vertical semiconductor light emitting device. On theother hand, fine grooves may be formed by roughing on an upper surfacefarthest from the first conductive electrode 1156 on the undopedsemiconductor layer 1153 a.

According to the display apparatus described above, since theanisotropic conductive film 1030 is formed as a single film or entirelycoated on the wiring board, the transfer of a semiconductor lightemitting device is carried out once on a wafer.

Accordingly, the present disclosure proposes a manufacturing method andstructure capable of transferring semiconductor light emitting devices aplurality of times, thereby implementing a reduction in the transfer andmanufacturing cost of a large area. Hereinafter, the manufacturingmethod and structure of the present disclosure will be described indetail with reference to the drawings. In an example described below, asemiconductor light emitting device will be described based on thesemiconductor light emitting device described above with reference toFIGS. 10 through 12.

FIGS. 13A and 13B are conceptual views showing a case where ananisotropic conductive film is attached and a case where a plurality ofadhesive regions are patterned on a wafer with semiconductor lightemitting devices, and FIGS. 14A and 14B are conceptual views showing acase where an anisotropic conductive film is attached and a case where aplurality of adhesive regions are patterned on a wiring board.

According to FIG. 13A, a plurality of semiconductor light emittingdevices 1050 are spaced apart at a predetermined interval on a singlewafer substrate, and an anisotropic conductive film 1030 is bonded tocover a specific region on the wafer substrate. At this time, a singlesheet of anisotropic conductive film 1030 may be bonded to a single areaon the wafer substrate, or several sheets of anisotropic conductive film1030 may be bonded to the single area in a divided manner. In this case,the single region, as a region including a space between thesemiconductor light emitting devices, may be a region formed withoutbeing disconnected.

When thermo-compression bonding to the wiring board is carried out inthis state, semiconductor light emitting devices in the single regionare transferred to the wiring board. Referring to FIG. 14A, theanisotropic conductive film 1030 covers wiring electrodes and betweenthe wiring electrodes on a wiring board, and through this, bondingbetween the wiring board and semiconductor light emitting devices on awafer is carried out.

As described above, according to the structure in which the anisotropicconductive film 1030 is bonded to the wafer or the wiring board,semiconductor light emitting devices on the wafer may be transferredonce, thereby causing the constraint of size and difficulty in usingnon-transferred semiconductor light emitting devices.

In order to solve such a problem, in FIG. 13B, a plurality of adhesiveregions 1030 b are patterned on the wafer. For example, a liquid-phaseanisotropic conductive adhesive (ACA) may be pattern-printed on thewafer. The anisotropic conductive adhesive may be an anisotropicconductive paste (ACP) as a paste type adhesive. For another example, atleast one of silver paste, tin paste, and solder paste may bepattern-printed on the wafer. In this case, the silver paste, tin pasteand solder paste may replace the anisotropic conductive adhesive.

As shown in FIG. 13B, the anisotropic conductive adhesive is coated in aliquid phase in a predetermined pattern onto the electrodes of thesemiconductor light emitting device through a method such as a printingprocess (screen printing), a dispensing process, a liquid phase patterntransfer, or the like. For such an example, in a region covered by theanisotropic conductive film in FIG. 13A, coating and non-coating may besequentially carried out along one direction for the printing of theanisotropic conductive adhesive in FIG. 13B.

Referring to FIG. 14B, a plurality of adhesive regions 1030 b coveringpart of the wiring electrodes are provided, and these are sequentiallyarranged at a preset spacing distance. In this case, the resin of theanisotropic conductive adhesive may flow out into a space (S) formedbetween the plurality of adhesive regions 1030 b. In FIG. 13B, thesemiconductor light emitting device on which the anisotropic conductiveadhesive is not coated may be coated with the anisotropic conductiveadhesive and transferred to the wiring board at the time ofmanufacturing another display apparatus. Therefore, the semiconductorlight emitting devices grown on a large area wafer may be transferred aplurality of times.

Hereinafter, the structure of a display apparatus of the presentdisclosure will be described in detail with reference to theaccompanying drawings. FIG. 15 is a cross-sectional view showing anembodiment of a display apparatus when a plurality of adhesive regionsare patterned.

According to the drawing of FIG. 15, as a display apparatus usingsemiconductor light emitting devices, there is illustrated a displayapparatus 2000 using flip chip type semiconductor light emitting devicesdescribed with reference to FIGS. 10 through 12. More specifically,there is illustrated a case in which a new phosphor layer structure isapplied to a flip chip type semiconductor light emitting devicedescribed with reference to FIGS. 10 through 12. However, an exampledescribed below is also applicable to a display apparatus using anothertype of semiconductor light emitting device described above.

In the present example to be described below, the same or similarreference numerals are designated to the same or similar components asthose of the example described above with reference to FIGS. 10 through12, and the description thereof will be substituted by the earlierdescription. For example, the display apparatus 2000 includes asubstrate 2010, a first electrode 2020, a second electrode 2040, and aplurality of semiconductor light emitting devices 2050, and thedescriptions thereof will be substituted by the description withreference to FIGS. 10 through 12 as described above.

The substrate 2010 is a wiring board having wiring electrodes, and thefirst electrode 2020 may be a wiring electrode located on the substrate2010, and formed with a bar-shaped electrode elongated in one direction.The first electrode 2020 may be formed to perform the role of a dataelectrode.

A plurality of second electrodes 2040 disposed in a direction ofcrossing the length direction of the first electrode 2020, andelectrically connected to the semiconductor light emitting device 2050may be located between the semiconductor light emitting devices.

As shown in the drawing, the plurality of semiconductor light emittingdevices 2050 may form a plurality of columns in a direction parallel toa plurality of electrode lines provided in the first electrode 2020.However, the present disclosure is not necessarily limited thereto. Forexample, the plurality of semiconductor light emitting devices 2050 mayform a plurality of columns along the second electrode 2040.

According to the illustration, the substrate 2010 is covered by theconductive adhesive layer 2030. In addition, the plurality ofsemiconductor light emitting devices 2050 are coupled to the conductiveadhesive layer 2030, and electrically connected to the wiringelectrodes.

The conductive adhesive layer is formed on the substrate 2010 at aposition corresponding to the first electrode 2020. For example, theconductive adhesive layer 2030 may have a plurality of adhesive regions2031, 2032 that are coated in a patterned shape on each electrode of thesemiconductor light emitting devices, and are spaced apart from eachother on the wiring board.

A plurality of semiconductor light emitting devices 2050 are coupled tothe conductive adhesive layer 2030, and electrically connected to thefirst electrode 2020 and the second electrode 2040 by the foregoingstructure.

More specifically, individual adhesion regions of the plurality ofadhesive regions 2031, 2032 are disposed between the first electrode2020 and the first conductive electrode 2156 of the semiconductor lightemitting device. At this time, the first conductive electrode 2156 maybe a p-type electrode.

Each of the adhesive regions 2031, 2032 may have a size capable ofsurrounding a side surface of the wiring board and surrounding a sidesurface of the semiconductor light emitting device. For an example, awidth of the adhesive region may be 1 to 1.5 times larger than that ofthe first electrode 2020.

In this case, an insulating material 2070 may be disposed between theplurality of adhesive regions 2031, 2032 to fill a space between theplurality of semiconductor light emitting devices.

The insulating material 2070 may be formed of a material different fromthe conductive adhesive layer. For such an example, the insulatingmaterial 2070 may be formed of a light-transmitting material such assilicon oxide (SiOx), polymer, or the like, and in this case, theinsulating material 2070 may have a transmittance of 80% or more in awavelength range within visible light.

For another example, the insulating material 2070 may be formed of amaterial having a property of reflecting light, or may be formed of amaterial having adhesiveness. In micro-unit semiconductor light emittingdevices, since each of the devices is isolated, when the insulatingmaterial 2070 reflects light escaping from a side surface of the deviceto the outside, an increase in light extraction efficiency may beexpected.

At this time, the insulating material 2070 may be formed in a directionparallel to a plurality of electrode lines provided in the firstelectrode 1020. Thus, the insulating material 2070 forms a plurality oflines spaced apart from each other.

Meanwhile, the insulating material 2070 may be formed to extend in thesame direction as the first conductive electrode 2156. For example, thefirst conductive electrode 2156 may be formed in a bar shape (lineshape) similar to the first electrode. More specifically, the firstconductive electrode 2156 may be extended toward an adjacentsemiconductor light emitting device to be a common electrode ofneighboring semiconductor light emitting devices, and the insulatingmaterial 2070 may be formed in parallel to the semiconductor lightemitting device.

Meanwhile, the plurality of adhesive regions may include at least one ofan anisotropic conductive adhesive (ACA), a silver paste, a tin paste,and a solder paste.

In the case of the anisotropic conductive adhesive, a paste-shapedadhesive having anisotropic conductivity is cured to form the adhesiveregion. The anisotropic conductive adhesive may include a binder, anepoxy resin, a curing agent, and a conductive ball. In addition, afiller, a coupling agent, and a solvent may be further included in theanisotropic conductive adhesive.

In addition, a white pigment may be added to the anisotropic conductiveadhesive to reflect light escaping to the outside between thesemiconductor light emitting device and the wiring board. Moreover, aninorganic powder may be added to the anisotropic conductive adhesive,thereby increasing thixotropy and improving printing property. Inaddition, a reactive solvent may be added to the anisotropic conductiveadhesive for a B-stage process for ensuring post-printingprocessability.

According to the structure described above, a liquid-phase conductiveadhesive may be partially printed on a wafer or a wiring board, therebytransferring semiconductor light emitting devices in a desired pattern,and accordingly, a manufacturing method with a very wide range ofapplication fields may be implemented.

Hereinafter, a manufacturing method applied to the present disclosurewill be described with reference to the drawings.

FIGS. 16, 17 and 18 are cross-sectional views showing a manufacturingmethod of a display apparatus using semiconductor light emitting devicesaccording to the present disclosure.

First, according to the manufacturing method, an n-type semiconductorlayer 2153, an active layer 2154, and a p-type semiconductor layer 2155are respectively grown on a growth substrate 2059 ((a) of FIG. 16).

When the n-type semiconductor layer 2153 is grown, the active layer 2154is then grown on the n-type semiconductor layer 2153, and the p-typesemiconductor layer 2155 is then grown on the active layer 2154. Whenthe n-type semiconductor layer 2153, the active layer 2154 and thep-type semiconductor layer 2155 are sequentially grown as describedabove, a layered structure of micro semiconductor light emitting devicesis formed as illustrated in (a) of FIG. 16.

The growth substrate 2059 (wafer) may be formed of any one of materialshaving light transmission properties, for example, sapphire (Al₂O₃),GaN, ZnO, and AlO, but is not limited thereto. Furthermore, the growthsubstrate 2059 may be formed of a carrier wafer, which is a materialsuitable for semiconductor material growth. The growth substrate (W) maybe formed of a material having an excellent thermal conductivity, andfor example, a SiC substrate having a higher thermal conductivity than asapphire (Al₂O₃) substrate or a SiC substrate including at least one ofSi, GaAs, GaP, InP and Ga₂O₃ may be used.

Next, at least part of the active layer 2154 and the p-typesemiconductor layer 2155 are removed to expose at least part of then-type semiconductor layer 2153 ((b) of FIG. 16).

In this case, the active layer 2154 and the p-type semiconductor layer2155 are partly removed in a vertical direction, and the n-typesemiconductor layer 2153 is exposed to the outside. Through this, a mesaprocess is carried out. Then, the n-type semiconductor layer 2153 isetched to isolate a plurality of light emitting devices so as to form alight emitting device array. As described above, the p-typesemiconductor layer 2155, the active layer 2154, and the n-typesemiconductor layer 2153 are etched to form a plurality of microsemiconductor light emitting devices.

Next, an n-type electrode 2152 and a p-type electrode 2156 having aheight difference in a thickness direction are formed on the n-typesemiconductor layer 2153 and the p-type semiconductor layer 2155,respectively, so as to implement a flip chip type light emitting device((c) of FIG. 16).

The n-type electrode 2152 and the p-type electrode 2156 may be formed bya deposition process such as sputtering, but the present disclosure isnot necessarily limited thereto. Here, the n-type electrode 2152 may bethe foregoing second conductive electrode, and the p-type electrode 2156may be the first conductive electrode.

Next, in a state where the n-type electrode 2152 and the p-typeelectrode 2156 are formed, a conductive adhesive is coated on theelectrodes of the first semiconductor light emitting devices to form aconductive adhesive layer 2030 ((d) of FIG. 16)).

In this case, the conductive adhesive layer 2030 may be formed on onesurface of the semiconductor light emitting device, or may have a sizecapable of surrounding a side surface of the semiconductor lightemitting device. For such an example, a width of the conductive adhesivelayer 2030 may be smaller than or equal to that of the p-type electrode2156 and coated on the p-type electrode 2156.

For another example, a width of the conductive adhesive layer 2030 maybe 1 to 1.5 times larger than that of the p-type electrode 2156.Moreover, the conductive adhesive layer 2030 may be formed in a largersize than the maximum cross-sectional area of the semiconductor lightemitting device. At this time, the conductive adhesive layer 2030 may beformed in a structure of completely surrounding a side surface of thesemiconductor light emitting device by a bonding process.

The conductive adhesive is formed on the substrate 2010 at a positioncorresponding to the first electrode 2020. For such an example, theconductive adhesive is coated on the p-type electrode 2156. Morespecifically, the conductive adhesive is coated on the p-type electrode2156 of each of the plurality of semiconductor light emitting devices,thereby forming a plurality of adhesive regions spaced apart from eachother on the wiring board.

In this case, the conductive adhesive is coated on only part of theplurality of semiconductor light emitting devices on the growthsubstrate. The conductive adhesive may be selectively pattern-printed onthe growth substrate by at least one of screen printing, dispensing, andliquid-phase pattern transfer. For an example of the pattern, theconductive type adhesive may be coated on two semiconductor lightemitting devices with at least one semiconductor light emitting devicetherebetween. This may be carried out in both row and column directions.As described above, according to the intention of the designer, theconductive adhesive may be coated only on a desired semiconductor lightemitting device.

However, the present disclosure is not necessarily limited thereto, andfor example, the conductive adhesive may be coated on a wiring electrodeon the wiring board using pattern printing, instead of the growthsubstrate.

Meanwhile, the conductive adhesive may include at least one of ananisotropic conductive adhesive (ACA), a silver paste, a tin paste, anda solder paste.

In the case of the anisotropic conductive adhesive, it may be in theform of a paste having anisotropic conductivity. The anisotropicconductive adhesive may include a binder, an epoxy resin, a curingagent, and a conductive ball. In addition, a filler, a coupling agent,and a solvent may be further included in the anisotropic conductiveadhesive.

In addition, a white pigment may be added to the anisotropic conductiveadhesive to reflect light escaping to the outside between thesemiconductor light emitting device and the wiring board. Moreover, aninorganic powder may be added to the anisotropic conductive adhesive,thereby increasing thixotropy and improving printing property.

Next, a space between the semiconductor light emitting devices spacedapart may be filled with an insulating material. In other words, theprocess of pattern-printing the conductive adhesive on the growthsubstrate, and then printing or coating an insulating material on thegrowth substrate is carried out (not shown).

The present process may be a B-stage process for ensuring post-printingprocessability, and a reactive solvent may be added to the anisotropicconductive adhesive for the B-stage process.

Next, the first semiconductor light emitting devices 2050 a are alignedon the first wiring board 2010 a having wiring electrodes, and then thegrowth substrate 2059 is removed ((a) of FIG. 17).

The first electrode 2020 is provided on the first wiring board 2010 a,and the first electrode 2020 is disposed along a row direction so as toserve as a data electrode in the display apparatus 2000 of the presentdisclosure.

The growth substrate is removed using a laser lift-off method (LLO) or achemical lift-off method (CLO), and the semiconductor light emittingdevice is bonded to the conductive adhesive prior to removal. In thiscase, the laser lift-off method or chemical lift-off method isselectively carried out only on the semiconductor light emitting deviceon which the conductive adhesive is coated. Therefore, the semiconductorlight emitting devices on which the conductive adhesive is not coatedremain on the removed growth substrate.

The wiring electrodes 2020 of the wiring board 2010 a and the p-typeelectrodes 2020 of the first semiconductor light emitting devices 2050 aare electrically connected to each other during bonding, and thus thewiring electrode of the wiring board 2010 a may be a p-common electrode.

Subsequent to the bonding and growth substrate removal processes, theprocess of filling a space between the semiconductor light emittingdevices with an insulating material ((b) of FIG. 17) may be carried out.As described above, the insulating material 2070 may be formed of amaterial different from the conductive adhesive layer.

Then, a second electrode 2040 (refer to FIG. 10) extended in onedirection from the n-type semiconductor layer to electrically connectthe plurality of semiconductor light emitting devices may be connectedto the n-type electrode 2152.

Next, for the implementation of red, green, and blue, the process offorming the above-described phosphor layer or a color substrate iscarried out, and thereby a single display apparatus may be completed.

A single display apparatus is completed using part of the semiconductorlight emitting devices on the growth substrate as described above, andthen another display apparatus is manufactured using other semiconductorlight emitting devices on the growth substrate.

For example, the process of coating the conductive adhesive on theelectrodes of the second semiconductor light emitting devices 2050 b maybe carried out ((a) of FIG. 18).

By the manufacturing process of FIGS. 16 and 17, the semiconductor lightemitting devices are arranged and remained at specific intervals at theforegoing growth substrate. In the present process, a conductiveadhesive is pattern-printed again on other semiconductor light emittingdevices on the growing substrate to implement transfer of the growthsubstrate a plurality of times.

Then, the process of aligning the second semiconductor light emittingdevices 2050 b on the second wiring board 2010 b, and then removing thegrowth substrate is carried out ((b) of FIG. 18).

Subsequent to the bonding and growth substrate removal processes, theprocess of filling a space between the semiconductor light emittingdevices with an insulating material ((c) of FIG. 18), the process offorming the second electrode 2040 ((d) of FIG. 18), and the process offorming a phosphor layer or a color filter may be carried out, therebycompleting another display apparatus.

According to such a method, a conductive liquid phase may be selectivelypatterned in a region of the semiconductor light emitting device to betransferred to perform a transfer pattern of the same semiconductorlight emitting device on a single growth substrate.

Meanwhile, the above-described manufacturing method may also beapplicable to a method of individually transferring red semiconductorlight emitting devices, green semiconductor light emitting devices, andblue semiconductor light emitting devices to implement red, green, andblue colors as well as a method of performing multiple transfers on thesame pattern. Hereinafter, such application examples will be describedin detail with reference to the drawings.

FIGS. 19, 20A, 20B and 21 are conceptual views showing another exampleof a manufacturing method of a display apparatus using semiconductorlight emitting devices according to the present disclosure.

First, green semiconductor light emitting devices and blue semiconductorlight emitting devices are separately grown on a growth substrate (LEDwafer) such that the light emitting structure of a green semiconductorlight emitting device and a blue semiconductor light emitting device isgrown according to the manufacturing method ((a) of FIG. 19). Asillustrated in the drawing, the growth substrate may be a sapphiresubstrate.

At this time, in each of the growth substrates (Green LED wafer, BlueLED wafer), the process described with reference to (a), (b) and (c) ofFIG. 16 is carried out on each growth substrate (green LED wafer, blueLED wafer), thereby providing green light emitting devices on a firstgrowth substrate (green LED wafer), and providing blue light emittingdevices on a second growth substrate (blue LED wafer).

In this case, the green semiconductor light emitting devices and theblue semiconductor light emitting devices may be provided on a growthsubstrate, and the red semiconductor light emitting devices may beprovided on a donor plate or film. However, the present disclosure isnot necessarily limited thereto. For example, a red pixel may beimplemented by a combination of a blue semiconductor light emittingdevice and a red phosphor or a color filter, and this case will bedescribed later.

Next, the process of coating a conductive adhesive on an electrode ofthe green semiconductor light emitting devices or a first portioncorresponding to the green semiconductor light emitting devices on awiring electrode of the wiring board is carried out ((b) of FIG. 19). Inthe present process, the above-described manufacturing method in (d) ofFIG. 16 may be applicable, and a case where a conductive adhesive iscoated on the electrodes of the green semiconductor light emittingdevices is illustrated.

As described above, the conductive adhesive may be selectivelypattern-printed on the growth substrate by at least one of screenprinting, dispensing, and liquid-phase pattern transfer. Furthermore,the conductive adhesive may be at least one of a liquid-phaseanisotropic conductive adhesive (ACA), a silver paste, a tin paste, anda solder paste.

Then, the process of coupling the green semiconductor light emittingdevices to the first portion is carried out. As described above withreference to (a) of FIG. 17, the green semiconductor light emittingdevices are aligned on a first wiring board 3010 a provided with thewiring electrodes ((c) of FIG. 19) and then the growth substrate isremoved ((d) of FIG. 19).

Next, a blue semiconductor light emitting device is bonded andtransferred to a desired position on a second wiring board 3010 b otherthan the first wiring board 3010 a in a method similar to that of FIG.19 (FIG. 20A). Furthermore, a red semiconductor light emitting device isbonded and transferred to a desired position on a wiring board otherthan the first wiring board from a donor plate (FIG. 20B). In this case,the bonding and transfer processes are carried out on a third wiringboard 3010 c and a fourth wiring board 3010 d, respectively, andtherefore, an empty space in which a plurality of red semiconductorlight emitting devices have been transferred may be formed on the donorplate (FIG. 19B).

Next, the process of coating the conductive adhesive on a second portioncorresponding to the blue semiconductor light emitting devices on theelectrodes of the blue semiconductor light emitting devices or thewiring electrodes, and coupling the blue semiconductor light emittingdevices to the second portion may be carried out ((a) and (b) of FIG.21).

For example, the blue semiconductor light emitting devices aretransferred to a desired position of the first wiring board 3010 a usinga growth substrate (blue LED wafer) on which a semiconductor lightemitting device has been transferred to the second wiring board. Thegrowth substrate used in this case may be a second growth substrate(Blue LED wafer) on which at least one transfer has been carried out togenerate one empty space. At this time, the above-describedmanufacturing method in (d) of FIG. 16 and the manufacturing method in(a) of FIG. 17 may be applicable.

Furthermore, the process of coating the conductive adhesive on a thirdportion corresponding to the red semiconductor light emitting devices onthe electrodes of the red semiconductor light emitting devices or thewiring electrodes, and coupling the red semiconductor light emittingdevices to the third portion may be carried out ((c) and (d) of FIG.21).

Finally, the red semiconductor light emitting device are transferred toa desired position of the first wiring board 3010 a using a donor plateon which a semiconductor light emitting device has been transferred tothe third wiring board 3010 c and the fourth wiring board 3010 d. Thegrowth substrate used in this case may be a substrate on which at leasttwo transfers have been carried out to generate two empty spaces. Evenat this time, the manufacturing method in (d) of FIG. 16 and themanufacturing method in (a) of FIG. 17 may be applicable.

Then, on the second wiring board 3010 b or the third wiring board 3010 cusing an empty space at an individually transferred position, bondingtransfer is carried out for a color pixel other than pixels alreadytransferred to the substrate.

For an example, the process of aligning the growth substrate of thegreen semiconductor light emitting devices to another wiring board andtransferring the green semiconductor light emitting devices to theanother wiring board may be carried out. Similarly, the process ofaligning the growth substrate of the blue semiconductor light emittingdevices to another wiring board and transferring the blue semiconductorlight emitting devices to the another wiring board may be carried out.

Furthermore, a method of transferring the blue semiconductor lightemitting devices to a desired position of the second wiring board 3010 busing a growth substrate on which a semiconductor light emitting devicehas been transferred to the first wiring board 3010 a is also allowed.In this case, the semiconductor light emitting device that has beencoupled to the another wiring board may be aligned at a portion wherethe green semiconductor light emitting device is not present by couplingthe green semiconductor light emitting devices to the first portion.

In the present example, green, blue, and red may be transferred using anempty space of the initially transferred substrate irrespective of theorder. According to the manufacturing method described above, the greensemiconductor light emitting device and the blue semiconductor lightemitting device may be grown on separate substrates and thenindividually transferred to a single wiring board.

On the other hand, FIGS. 22 and 23 illustrate another manufacturingmethod of the present disclosure.

In (a) of FIG. 22 and (a) in FIG. 23, it is shown that a growthsubstrate of green semiconductor light emitting devices and a growthsubstrate of blue semiconductor light emitting devices in which onesemiconductor light emitting device is missing are respectively bondedto a substrate on which a red semiconductor light emitting device hasbeen previously transferred. Through this, a substrate with green andred and a substrate with blue and red may be manufactured as shown in(b) of FIG. 22 and (b) of FIG. 23.

Next, a blue semiconductor light emitting device is bonded andtransferred to the substrate with green and red using the growthsubstrate of blue semiconductor light emitting devices in which the twosemiconductor light emitting devices are missing as shown in (c) and (d)of FIG. 22. Similarly, a green semiconductor light emitting device isbonded and transferred to the substrate with blue and red using thegrowth substrate of green semiconductor light emitting devices in whichtwo semiconductor light emitting devices are missing as shown in (c) and(d) of FIG. 23.

As described above, by the manufacturing method illustrated in FIGS. 22and 23, it may be possible to individually bond green, blue, and redsemiconductor light emitting devices to the wiring board while usingmultiple transfers on a large area growth substrate.

Meanwhile, as described above, in the present example, the redsemiconductor light emitting device may be replaced with a combinationof a blue semiconductor light emitting device and a phosphor layer.FIGS. 24 and 25 are conceptual views showing a manufacturing method ofbonding and transferring only blue and green semiconductor lightemitting devices to a wiring board.

In (a), (b) and (c) of FIG. 24, multiple transfers are carried out on asingle growth substrate to prepare a green LED wafer of greensemiconductor light emitting devices in which two semiconductor lightemitting devices are missing and a blue LED wafer of blue semiconductorlight emitting devices in which two blue semiconductor light emittingdevices have been transferred once.

In this case, a green LED wafer of green semiconductor light emittingdevices in which two semiconductor light emitting devices are missing isformed to have two empty spaces with one green semiconductor lightemitting device therebetween.

According to (d) of FIG. 24 and (a) of FIG. 25, a green LED wafer ofgreen semiconductor light emitting devices having two empty spaces,formed in (b) of FIG. 24, is aligned with a wiring board 4010 b to whichtwo blue semiconductor light emitting devices are transferred, formed in(c) of FIG. 24, and one green semiconductor light emitting device isbonded and transferred to the wiring board 4010 b.

On the other hand, according to (b) and (c) of FIG. 25, using the growthsubstrate of blue semiconductor light emitting devices in which two bluesemiconductor light emitting devices has been transferred, two bluesemiconductor light emitting devices are transferred again to the wiringboard 4010 a to which one green semiconductor light emitting device istransferred.

Finally, as shown in FIG. 25D, a red phosphor layer 4082 may bedeposited on either one of the two blue semiconductor light emittingdevices in the manufactured two wiring boards 4010 a, 4010 b,respectively, thereby implementing a red pixel.

Furthermore, the manufacturing method described above may use a donorplate other than a wiring board. In this case, the method is the same,but a nonconductive liquid-phase adhesive other than an anisotropicconductive adhesive or a solder may be pattern-printed on thesemiconductor light emitting device.

FIG. 26 is a conceptual view showing a process of selectivelytransferring semiconductor light emitting devices using a donor plate.

As shown in the drawing, a green semiconductor light emitting device anda blue semiconductor light emitting device are grown separately on eachgrowth substrate, and then transferred once to each donor plate (donorplate 1, donor plate 2) by selectively coating a non-conductive adhesive((a) and (b) of FIG. 26).

Then, respective growth substrates and donor plates are crossed witheach other, and the blue semiconductor light emitting device istransferred to the donor plate 1 on which the green semiconductor lightemitting device is transferred, and the green semiconductor lightemitting device is transferred to the donor plate 2 on which the bluesemiconductor light emitting device is transferred ((c) and (d) of FIG.26).

Next, a red semiconductor light emitting device is transferred to eachdonor plate (donor plate 1, donor plate 2) on which the blue and greensemiconductor light emitting devices are mounted ((e) of FIG. 24). Whenthe donor plates (donor plate 1, donor plate 2) are bonded to a wiringboard to manufacture a display apparatus, multiple transfers on a largearea wafer may be implemented.

The configurations and methods according to the above-describedembodiments will not be applicable in a limited way to the foregoingdisplay apparatus using a semiconductor light emitting device, and allor part of each embodiment may be selectively combined and configured tomake various modifications thereto.

What is the claimed is:
 1. A display apparatus, comprising: a wiringboard having wiring electrodes; a conductive adhesive layer covering thewiring electrodes; and a plurality of semiconductor light emittingdevices coupled to the conductive adhesive layer and electricallyconnected to the wiring electrodes, wherein the conductive adhesivelayer has a plurality of adhesive regions coated in a patterned shape oneach electrode of the semiconductor light emitting devices, and spacedapart from each other on the wiring board.
 2. The display apparatus ofclaim 1, wherein the plurality of adhesive regions have at least one ofan anisotropic conductive adhesive (ACA), a silver paste, a tin paste,and a solder paste.
 3. The display apparatus of claim 2, wherein a whitepigment is added to the anisotropic conductive adhesive.
 4. The displayapparatus of claim 2, wherein an inorganic powder is added to theanisotropic conductive adhesive.
 5. The display apparatus of claim 1,wherein an insulating material is disposed between the plurality ofadhesive regions to fill between the plurality of semiconductor lightemitting devices.
 6. The display apparatus of claim 5, wherein theinsulating material is formed of a material different from that of theconductive adhesive layer.
 7. A method of manufacturing a displayapparatus, the method comprising: growing first semiconductor lightemitting devices and second semiconductor light emitting devices on agrowth substrate; coating a conductive adhesive on the electrodes of thefirst semiconductor light emitting devices; aligning the firstsemiconductor light emitting devices on a first wiring board havingwiring electrodes, and then removing the growth substrate; coating theconductive adhesive on the electrodes of the second semiconductor lightemitting devices; and aligning the second semiconductor light emittingdevices on a second wiring board and then removing the growth substrate.8. The method of claim 7, wherein the conductive adhesive is selectivelypattern-printed on the growth substrate by at least one of screenprinting, dispensing, and liquid-phase pattern transfer.
 9. The methodof claim 7, wherein the conductive adhesive is at least one of ananisotropic conductive adhesive (ACA), a silver paste, a tin paste, anda solder paste.
 10. The method of claim 9, wherein a white pigment isadded to the anisotropic conductive adhesive.
 11. The method of claim 9,wherein an inorganic powder is added to the anisotropic conductiveadhesive.
 12. The method of claim 7, further comprising:pattern-printing the conductive adhesive on the growth substrate, andthen printing or coating an insulating material on the growth substrate.13. A method of manufacturing a display apparatus, the methodcomprising: growing green semiconductor light emitting devices and bluesemiconductor light emitting devices separately on a growth substratesuch that a light emitting structure of the green semiconductor lightemitting device and the blue semiconductor light emitting device isgrown; coating a conductive adhesive on an electrode of the greensemiconductor light emitting devices or a first portion corresponding tothe green semiconductor light emitting devices on a wiring electrode ofa wiring board; coupling the green semiconductor light emitting devicesto the first portion; and coating the conductive adhesive on anelectrode of the blue semiconductor light emitting devices or a secondportion corresponding to the blue semiconductor light emitting deviceson the wiring electrode, and coupling the blue semiconductor lightemitting devices to the second portion.
 14. The method of claim 13,further comprising: aligning the growth substrate of the greensemiconductor light emitting devices with another wiring board, andtransferring the green semiconductor light emitting devices to theanother wiring board.
 15. The method of claim 14, wherein, in saidtransferring step, the semiconductor light emitting device that has beencoupled to the another wiring board is aligned at a portion where thegreen semiconductor light emitting device is not present by coupling thegreen semiconductor light emitting devices to the first portion.
 16. Themethod of claim 13, further comprising: providing red semiconductorlight emitting devices on a separate substrate, and coating theconductive adhesive on an electrode of the red semiconductor lightemitting devices or a third portion corresponding to the redsemiconductor light emitting devices on the wiring electrode, andcoupling the red semiconductor light emitting devices to the thirdportion.
 17. The method of claim 16, wherein the conductive adhesive isselectively pattern-printed on the growth substrate by at least one ofscreen printing, dispensing, and liquid-phase pattern transfer.
 18. Themethod of claim 16, wherein the conductive adhesive is at least one ofan anisotropic conductive adhesive (ACA), a silver paste, a tin paste,and a solder paste.